High Voltage MOSFETs | FCD900N60Z

NチャンネルSuperFET® II MOSFET 600V、4.5A、900mΩ

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Overview

SuperFET® II MOSFETは、フェアチャイルドセミコンダクターの新しい高電圧スーパージャンクション(SJ)MOSFETファミリーです。非常に低いオン抵抗と低ゲート電荷性能のための電荷バランス技術を採用しています。 この技術は導電損失を最小限に抑え、優れたスイッチング性能、dv/dt レート、および高い電子なだれエネルギーを提供するよう計画されています。 その結果、SuperFET II MOSFETは、PFC、サーバー/テレコム電源、FPD テレビの電源、ATX 電源と産業用電力アプリケーションなどのスイッチング電源アプリケーションに最適です。

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  • 650 V at TJ = 150°C
  • 最大RDS(on)=900mΩ
  • 非常に少量のゲート電荷 (通常 Qg = 13 nC )
  • 低実効出力容量 (通常 Coss.eff = 49 pF )
  • 100%電子なだれテスト済み
  • 向上したESD容量

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD900N60Z

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

High Voltage

Standard

0

Single

0

600

900

DC: ±20, AC: ±30

3.5

4.5

52

-

-

-

13.1

543

4.8

1300

400

20

$0.621

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