High Voltage MOSFETs | FCD3400N80Z

Power MOSFET、Nチャネル、SUPERFET® II、800 V、2 A、3.4 Ω、DPAK

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Overview

SuperFET® II MOSFETは、最新の高電圧スーパージャンクション（SJ）MOSFETファミリーであり、電荷バランス技術を活用して優れた低オン抵抗と低ゲート電荷性能を実現します。この技術は、伝導損失を最小限に抑え、優れたスイッチング性能、dv / dtレート、およびより高いアバランシェエネルギーに対応するよう構成されています。その結果、SuperFET II MOSFETは、オーディオ、ノートPC用アダプター、照明、ATX電源、産業用電源アプリケーションなどのスイッチング電源アプリケーションに非常に適しています。

  • Computing
  • Consumer
  • Industrial
  • Notebook / Desktop computer / Game console
  • LCD / LED TV
  • Telecom / Server
  • LED Lighting / Ballast
  • Adapter
  • RDS(on) = 2.75 Ω (標準)
  • 低ゲート電荷 (通常 Qg = 7.4 nC)
  • 低Eoss （通常 0.9 uJ @ 400V)
  • 低実効出力容量 (通常 Coss(eff.) = 41 pF)
  • 100%電子なだれテスト済み
  • RoHS準拠
  • ESD容量が向上

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD3400N80Z

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

High Voltage

Standard

0

Single

0

800

3400

DC: ±20, AC: ±30

4.5

2

32

-

-

-

7.4

299

3.1

868

12.7

0.36

$0.6787

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