SGF5N150UF: IGBT, Discrete, High Performance

内容: Fairchild’s Insulated Gate Bipolar Transistor (IGB...
  • Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.
  • 特長
  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 4.7 V @ I C = 5A
  • High Input Impedance
  • アプリケーション
  • Other Industrial
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    SGF5N150UFTU
  • 状態: Active
  • Compliance: Pb-free 
  • 内容: IGBT, Discrete, High Performance
  • 外形 タイプ: TO-3PF-3L
  • 外形 Case Outline: 340AH
  • MSL: NA
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 360
  • 在庫

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>10K
  • Specifications
  • V(BR)CES Typ (V): 1500 
  • IC Max (A): 10 
  • VCE(sat) Typ (V): 4.7 
  • VF Typ (V):
  • Eoff Typ (mJ): 0.1 
  • Eon Typ (mJ): 0.19 
  • Trr Typ (ns):
  • Irr Typ (A):
  • Gate Charge Typ (nC): 30 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 62.5 
  • Co-Packaged Diode: No 
  • Package Type: TO-3PF-3L 
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