NZT660A: PNP Low Saturation Transistor

内容: These devices are designed with high current gain ...
  • These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
  • 特長
    アプリケーション
  • This product is general usage and suitable for many different applications.
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    NZT660A
  • 状態: Active
  • Compliance: Pb-free 
  • 内容: PNP Low Saturation Transistor
  • 外形 タイプ: SOT-223-4 / TO-261-4
  • 外形 Case Outline: 318H-01
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 4000
  • 在庫

  • Market Leadtime (weeks):Contact Factory
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  • Avnet:>1K
  • Digikey:>10K
  • Newark:>1K
  • Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.5 
  • IC Cont. (A):
  • VCEO Min (V): 60 
  • VCBO (V): 60 
  • VEBO (V):
  • VBE(sat) (V): 1.25 
  • VBE(on) (V):
  • hFE Min: 250 
  • hFE Max: 550 
  • fT Min (MHz): 75 
  • PTM Max (W):
  • Package Type: SOT-223-4 / TO-261-4 
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