NGTB40N65IHL2: IGBT, 650V 40A FS2 Induction Heating

内容: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • 特長
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • TJmax = 175°C
  • Soft, Fast Free Wheeling Diode
  • アプリケーション
  • Inductive Heating
  • Soft Switching
  • 技術資料 & デザイン・リソース
    製品変更通知
    供給状況 & サンプル
    NGTB40N65IHL2WG
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: IGBT, 650V 40A FS2 Induction Heating
  • 外形 タイプ: TO-247-3
  • 外形 Case Outline: 340AL
  • MSL: NA
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 30
  • 在庫

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • ON Semiconductor:330
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 45 
  • VCE(sat) Typ (V): 1.8 
  • VF Typ (V): 1.2 
  • Eoff Typ (mJ): 0.36 
  • Eon Typ (mJ):
  • Trr Typ (ns): 465 
  • Irr Typ (A): 36 
  • Gate Charge Typ (nC): 135 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 300 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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