MJE253: 4.0 A, 100 V PNP Bipolar Power Transistor

内容: The Bipolar Power Transistor is designed for low p...
  • The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
  • 特長
  • High Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc
    hFE = 40-200
    hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product -
    fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available
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    供給状況 & サンプル
    MJE253G
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: 4.0 A, 100 V PNP Bipolar Power Transistor
  • 外形 タイプ: TO-225-3
  • 外形 Case Outline: 77-09
  • MSL: NA
  • 梱包形態 タイプ: BLKBX
  • 梱包形態 数量: 500
  • 在庫

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:<1K
  • Digikey:>1K
  • Newark:<1K
  • Newark:>1K
  • PandS:>1K
  • MJE253
  • 状態: Obsolete
  • Compliance: 
  • 内容: 4.0 A, 100 V PNP Bipolar Power Transistor
  • 外形 タイプ: TO-225-3
  • 外形 Case Outline: 77-09
  • MSL: NA
  • 梱包形態 タイプ: BLKBX
  • 梱包形態 数量: 500
  • パッケージ
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.6 
  • IC Cont. (A):
  • VCEO Min (V): 100 
  • VCBO (V): 100 
  • VEBO (V):
  • VBE(sat) (V): 1.8 
  • VBE(on) (V): 1.5 
  • hFE Min: 40 
  • hFE Max: 180 
  • fT Min (MHz): 40 
  • PTM Max (W): 15 
  • Package Type: TO-225-3 
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