MJD243: 4.0 A, 100 V NPN Bipolar Power Transistor

内容: The Bipolar Power Transistor is designed for low v...
  • The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
  • 特長
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    hFE = 40 (Min) @ IC= 200 mAdc
    hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
  • 技術資料 & デザイン・リソース
    製品変更通知
    供給状況 & サンプル
    MJD243G
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: 4.0 A, 100 V NPN Bipolar Power Transistor
  • 外形 タイプ: DPAK-3
  • 外形 Case Outline: 369C
  • MSL: 1
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 75
  • 在庫

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • ON Semiconductor:4,800
  • MJD243T4G
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: 4.0 A, 100 V NPN Bipolar Power Transistor
  • 外形 タイプ: DPAK-3
  • 外形 Case Outline: 369C
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 2500
  • 在庫

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>10K
  • Newark:<1K
  • Newark:>1K
  • ON Semiconductor:215,000
  • PandS:>1K
  • NJVMJD243T4G
  • 状態: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • 内容: 4.0 A, 100 V NPN Bipolar Power Transistor
  • 外形 タイプ: DPAK-3
  • 外形 Case Outline: 369C
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 2500
  • 在庫

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:35,000
  • MJD243
  • 状態: Obsolete
  • Compliance: 
  • 内容: 4.0 A, 100 V NPN Bipolar Power Transistor
  • 外形 タイプ: DPAK-3
  • 外形 Case Outline: 369C
  • MSL: 1
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 75
  • MJD243T4
  • 状態: Obsolete
  • Compliance: 
  • 内容: 4.0 A, 100 V NPN Bipolar Power Transistor
  • 外形 タイプ: DPAK-3
  • 外形 Case Outline: 369C
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 2500
  • パッケージ
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.6 
  • IC Cont. (A):
  • VCEO Min (V): 100 
  • VCBO (V): 100 
  • VEBO (V):
  • VBE(sat) (V): 1.8 
  • VBE(on) (V): 1.5 
  • hFE Min: 40 
  • hFE Max: 180 
  • fT Min (MHz): 40 
  • PTM Max (W): 12.5 
  • Package Type: DPAK-3 
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