FGH75T65SQDTL4: IGBT, 650 V, 75 A Field Stop Trench

内容: Using novel field stop IGBT technology, ON semicon...
  • Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential
  • 特長
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FGH75T65SQDTL4
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: IGBT, 650 V, 75 A Field Stop Trench
  • 外形 タイプ: TO-247-4
  • 外形 Case Outline: 340CJ
  • MSL: NA
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 450
  • 在庫

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 75 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V): 1.8 
  • Eoff Typ (mJ): 0.266 
  • Eon Typ (mJ): 0.307 
  • Trr Typ (ns): 76 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 128 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 375 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-4 
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