FFP08S60SN: 8A, 600V, STEALTH™ II Diode

内容: The FFP08S60SN is a STEALTH™ II diode with soft re...
  • The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
  • 特長
  • Stealth recovery Trr = 25ns (@IF= 8A)
  • Max Forward Voltage, VF = 3.4V (@ TC = 25°C)
  • 600V Reverse Voltage and High Reliability
  • Improved dv/dt capability
  • RoHS compliant
  • アプリケーション
  • LCD TV
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FFP08S60SNTU
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: 8A, 600V, STEALTH™ II Diode
  • 外形 タイプ: TO-220-2
  • 外形 Case Outline: 340BA
  • MSL: NA
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 1000
  • 在庫

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Newark:<1K
  • Specifications
  • Type: Single 
  • IO(rec) Max (A):
  • trr Max (ns): 25 
  • VRRM Max (V): 600 
  • VFM Max (V): 3.4 
  • IFSM Max (A): 60 
  • IR Max (mA): 0.1 
  • Package Type: TO-220-2 
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