FDS2672_F085: N-Channel UltraFET® Trench 200V, 3.9A, 70mΩ

内容: This single N-Channel MOSFET is produced using an ...
  • This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • 特長
  • Max. rDS(on) = 70mΩat VGS = 10V, ID = 3.9A
  • Max. rDS(on) = 80mΩat VGS = 6V, ID = 3.5A
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • Qualified to AEC Q101
  • RoHS compliant
  • アプリケーション
  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • DC-DC Conversion
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FDS2672-F085
  • 状態: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • 内容: N-Channel UltraFET® Trench 200V, 3.9A, 70mΩ
  • 外形 タイプ: SOIC-8
  • 外形 Case Outline: 751EB
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 2500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 3.9 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 70 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 33 
  • Ciss Typ (pF): 1905 
  • Package Type: SOIC-8 
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