FDMS86200DC: N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ

内容: This N-Channel MOSFET is produced using an advance...
  • This N-Channel MOSFET is produced using an advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
  • 特長
  • Shielded Gate MOSFET Technology
  • Dual Cool™ Top Side Cooling PQFN package
  • Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A
  • Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A
  • High performance technology for extremely low rDS(on)
  • 100% UIL tested
  • RoHS Compliant
  • アプリケーション
  • Energy Generation & Distribution
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FDMS86200DC
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ
  • 外形 タイプ: PQFN-8
  • 外形 Case Outline: 483BK
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 150 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 40 
  • PD Max (W): 125 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 17 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 19 
  • Ciss Typ (pF): 2110 
  • Package Type: PQFN-8 
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