FDMC8462: N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ

内容: This N-Channel MOSFET is produced using an advance...
  • This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • 特長
  • Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A
  • Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A
  • Low Profile - 1mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant
  • アプリケーション
  • This product is general usage and suitable for many different applications.
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FDMC8462
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ
  • 外形 タイプ: PQFN-8
  • 外形 Case Outline: 483AK
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 3000
  • 在庫

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Newark:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 20 
  • PD Max (W): 41 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 5.8 
  • Qg Typ @ VGS = 4.5 V (nC): 12 
  • Qg Typ @ VGS = 10 V (nC): 15 
  • Ciss Typ (pF): 2000 
  • Package Type: PQFN-8 
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