FCH041N65EFL4: Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L

内容: SuperFET® II MOSFET is a brand-new high...
  • SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
  • 特長
  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 36 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 229 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • アプリケーション
  • AC-DC Power Supplies
  • 最終製品
  • LCD / LED / PDP TV
  • Solar Inverter
  • Telecom / Server Power Supplies
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FCH041N65EFL4
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L
  • 外形 タイプ: TO-247-4
  • 外形 Case Outline: 340CJ
  • MSL: NA
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 450
  • 在庫

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 650 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V):
  • ID Max (A): 76 
  • PD Max (W): 595 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 41 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 229 
  • Ciss Typ (pF): 9446 
  • Package Type: TO-247-4 
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