NST3904DP6: Dual NPN Bipolar Transistor

内容: The Dual NPN Bipolar Transistor device is a spin o...
  • The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.
  • 特長
  • hFE, 100-300
  • Low VCE(sat), <0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device
  • アプリケーション
  • NPN General Purpose Switching Transistor
  • 技術資料 & デザイン・リソース
    製品変更通知
    供給状況 & サンプル
    NST3904DP6T5G
  • 状態: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • 内容: Dual NPN Bipolar Transistor
  • 外形 タイプ: SOT-963
  • 外形 Case Outline: 527AD
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 8000
  • 在庫

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:>10K
  • Mouser:>10K
  • PandS:>1K
  • NSVT3904DP6T5G
  • 状態: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • 内容: Dual NPN Bipolar Transistor
  • 外形 タイプ: SOT-963
  • 外形 Case Outline: 527AD
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 8000
  • Specifications
  • Polarity: Dual NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.3 
  • IC Cont. (A): 0.2 
  • VCEO Min (V): 40 
  • VCBO (V): 60 
  • VEBO (V):
  • VBE(sat) (V): 0.95 
  • VBE(on) (V):
  • hFE Min: 100 
  • hFE Max: 300 
  • fT Min (MHz): 200 
  • PTM Max (W): 0.42 
  • Package Type: SOT-963 
  • ON Semiconductor PCサイトを表示