NSR20306NX: Schottky Barrier Diode, 2 A, 30 V

内容: These Schottky barrier diodes are optimized for lo...
  • These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
  • 特長
  • Low Forward Voltage Drop − 440 mV (Typ.) @ IF = 2 A
  • Low Reverse Current − 40 A (Typ.) @ VR = 30 V
  • 2 A of Continuous Forward Current
  • ESD Rating − Human Body Model: Class 3B; Machine Model: Class C
  • High Switching Speed
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • アプリケーション
  • LCD and Keypad Backlighting
  • Camera Photo Flash
  • Buck and Boost dc−dc Converters
  • Reverse Voltage and Current Protection
  • Clamping & Protection
  • 最終製品
  • Smartphones
  • Tablets
  • Wearable Devices
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    NSR20306NXT5G
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: Schottky Barrier Diode, 2 A, 30 V, Schottky Barrier Diode, 2 A, 30 V
  • 外形 タイプ: DSN-2
  • 外形 Case Outline: 152AT
  • MSL: 1
  • 梱包形態 タイプ: DSFTP
  • 梱包形態 数量: 5000
  • 在庫

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • ON Semiconductor:10,000
  • Specifications
  • Configuration: Single 
  • VRRM Min (V): 30 
  • VF Max (V): 0.495 
  • IRM Max (µA): 150 
  • IO(rec) Max (A):
  • IFSM Max (A): 19 
  • trr Max (ns): 63 
  • Cj Max (pF): 170 
  • Package Type: DSN-2 
  • ON Semiconductor PCサイトを表示