NGTB30N120FL2: IGBT 1200V 30A FS2 Solar/UPS

内容: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • 特長
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10µs Short Circuit Capability
  • アプリケーション
  • Solar Inverter
  • Uninterruptible Power Supplies (UPS)
  • Welding
  • 技術資料 & デザイン・リソース
    製品変更通知
    供給状況 & サンプル
    NGTB30N120FL2WG
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: IGBT 1200V 30A FS2 Solar/UPS
  • 外形 タイプ: TO-247-3
  • 外形 Case Outline: 340AL
  • MSL: NA
  • 梱包形態 タイプ: TUBE
  • 梱包形態 数量: 30
  • 在庫

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 30 
  • VCE(sat) Typ (V):
  • VF Typ (V): 1.75 
  • Eoff Typ (mJ): 0.7 
  • Eon Typ (mJ): 2.6 
  • Trr Typ (ns): 240 
  • Irr Typ (A): 18 
  • Gate Charge Typ (nC): 220 
  • Short Circuit Withstand (µs): 10 
  • EAS Typ (mJ):  
  • PD Max (W): 452 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
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