FQN1N50C: Power MOSFET, N-Channel, QFET®, 500 V, 0.38 A, 6 Ω, TO-92

内容: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • 特長
  • 0.38A, 500V, RDS(on) = 6Ω(Max.) @VGS = 10 V, ID = 0.19A
  • Low gate charge ( Typ. 4.9nC)
  • Low Crss ( Typ. 4.1pF)
  • 100% avalanche tested
  • アプリケーション
  • Lighting
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FQN1N50CTA
  • 状態: Active
  • Compliance: Pb-free 
  • 内容: Power MOSFET, N-Channel, QFET®, 500 V, 0.38 A, 6 Ω, TO-92
  • 外形 タイプ: TO-92-3 LF
  • 外形 Case Outline: 135AR
  • MSL: NA
  • 梱包形態 タイプ: FNFLD
  • 梱包形態 数量: 2000
  • 在庫

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 500 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 0.38 
  • PD Max (W): 0.89 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 6000 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 4.9 
  • Ciss Typ (pF): 150 
  • Package Type: TO-92-3 LF 
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