FDB12N50TM: Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK

内容: UniFETTM MOSFET is Fairchild Semiconduc...
  • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
  • 特長
  • RDS(on) = 550mΩ ( Typ.)@ VGS = 10V, ID = 6A
  • Low gate charge ( Typ. 22nC)
  • Low Crss ( Typ. 11pF)
  • 100% avalanche tested
  • RoHS compliant
  • アプリケーション
  • This product is general usage and suitable for many different applications.
  • 技術資料 & デザイン・リソース
    供給状況 & サンプル
    FDB12N50TM
  • 状態: Active
  • Compliance: Pb-free Halide free 
  • 内容: Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK
  • 外形 タイプ: D2PAK-3 / TO-263-2
  • 外形 Case Outline: 418AJ
  • MSL: 1
  • 梱包形態 タイプ: REEL
  • 梱包形態 数量: 800
  • 在庫

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 500 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 11.5 
  • PD Max (W): 165 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 650 
  • Qg Typ @ VGS = 4.5 V (nC): 24 
  • Qg Typ @ VGS = 10 V (nC): 22 
  • Ciss Typ (pF): 985 
  • Package Type: D2PAK-3 / TO-263-2 
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